Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures

Modeling and Characterization of In0.12al0.88n/gan Hemts at Elevated Temperatures

Promising material properties of GaN, e.g., wide bandgap, high saturation velocity, and high thermal stability, make it an excellent material for high-power, high-frequency, and high-temperature applications. For some specific applications which require the device to operate at elevated temperatures, modeling and simulation provide very meaningful insights about the thermal device behavior. In ...

Fatigue Damage and Lifetime of SiC/SiC Ceramic-Matrix Composite under Cyclic Loading at Elevated Temperatures

In this paper, the fatigue damage and lifetime of 2D SiC/SiC ceramic-matrix composites (CMCs) under cyclic fatigue loading at 750, 1000, 1100, 1200 and 1300 °C in air and in steam atmosphere have been investigated. The damage evolution versus applied cycles of 2D SiC/SiC composites were analyzed using fatigue hysteresis dissipated energy, fatigue hysteresis modulus, fatigue peak strain and inte...

Characterization and Failure Mode Analysis of Cascode GaN HEMT

Graphene/GaN Schottky diodes: Stability at elevated temperatures

Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the ...

SiC Power Devices and Modules